Advancing Electronic Structure Modeling for Next Generation Quantum Materials

Authors

  • Md. Monirul Islam Department of Physics, Nasirabad College, Mymensingh, Bangladesh

DOI:

https://doi.org/10.54536/jsere.v1i2.6771

Keywords:

Electron Correlation, Electronic Structure Modeling, Physics-Informed Machine Learning, Quantum Materials, Spin-Orbit Coupling, Virtual Material Screening

Abstract

This study presents a reliable and efficient electronic structure modeling framework for next-generation quantum materials, which is directly applicable to practical applications. The proposed hybrid model uses Density Functional Theory, many-body correction, and physics-informed machine learning to accurately predict the band gap, quasiparticle energy, and density of states. The model’s average accuracy compared with experimental data was 0.89, significantly higher than 0.78 for conventional DFT and 0.84 for DFT plus GW. This precision simplifies the selection of suitable materials for quantum computing components, spintronic devices, and topological electronic systems. The study shows that electron correlation contributes about 34 percent, spin-orbit coupling contributes 26 percent, and lattice distortion contributes 21 percent, all of which directly affect device performance. It is possible to reduce the time and cost of experimental research by approximately 40-50% through virtual screening. As a result, this work can serve as a powerful decision-support tool for industrial researchers and policymakers, making a real and sustainable contribution to future quantum technology development.

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Published

2025-12-30

How to Cite

Islam, M. M. . (2025). Advancing Electronic Structure Modeling for Next Generation Quantum Materials. Journal of Sustainable Engineering & Renewable Energy, 1(2), 45-53. https://doi.org/10.54536/jsere.v1i2.6771

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